FDMC8321LDC datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Dual CoolTM Top Side Cooling PQFN package
* Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A
* Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A
* High perfor.

Application

* Primary DC-DC Switch
* Motor Bridge Switch
* Synchronous Rectifier Pin 1 G S S S Top Power 33 D DDD.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching pe.

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